KTP Associate – Semiconductor Device Engineer
Heriot-Watt University · Edinburgh, Scotland, GB
Role: KTP Associate – Semiconductor Device Engineer Contract: Full-time, Fixed Term for 24 months About our Team The Single-Photon Group at Heriot-Watt have...
Job description
Role: KTP Associate – Semiconductor Device Engineer Contract: Full-time, Fixed Term for 24 months About our Team: The Single-Photon Group at Heriot-Watt have a long–standing track record in researching ground-breaking single photon detection and applications in quantum communications and single-photon imaging. With single-photon avalanche diode (SPAD) detectors, we initiated and led collaborations to produce the first custom-designed InGaAs/InP single-photon avalanche diode detector (2006), first strained layer SiGe SPAD (2002), and custom-designed Ge-on-Si SPAD (2013), and first planar Ge-on-Si SPAD (2018). In quantum communications systems: work in the field led to a then world record transmission distance quantum key distribution system (2001); first demonstration of a quantum key distribution system operating at GHz clock–rate over an optical fibre link (2004); the first experimental demonstrations of quantum digital signatures (including the first experimental demonstration of quantum digital signatures over installed optical fibre in the Tokyo network) (2015 and 2017). We have pioneered single-photon three-dimensional imaging since the 1990’s and continue to innovate, for exa...